Bell Tower

Dave Nelson

Adjunct Professor

California State University Channel Islands

Department: Applied Physics

Current Courses - Fall 2019:

Physical Science 170, Sections 01, 1L, 2L

Physics 100, Sections 01, 1L, 2L

Contact Information:


Office: 2808 East Bell Tower

Office Hours:

Tuesday / Thursday 7:30AM – 12:00PM BTE 2808 - Schedule thru Canvas
Or By Appointment



B.S. Physics at University of Wisconsin; M.S. and Ph.D. Materials Science/Applied Physics at Cornell University : Specialization - High Pressure Physics

Semiconductor Physicist:
Research Staff Member at IBM T.J. Watson Reasearch Center; Project Leader at Trilogy Corporation; GaAs Technology Manager at GigaBit Logic; Principle Engineer, Process Development Manager, Manufacturing Engineering Manager, Foundry Technology Manager at Rockwell International/Conexant/Skyworks

Adjunct Professor in Department of Mathematics & Applied Physics at CSU Channel Islands, Camarillo, CA
Former Science Department Chair/Teacher at Renaissance Arts Academy, Eagle Rock, CA


Diamond targets for producing high intensity soft x-rays and a method of exposing x-ray resists, David A. Nelson, Jr. and Arthur L. Ruoff, Patent No. 4,266,138.

Alignment method and apparatus for x-ray and optical lithography, W.D. Grobman, David A. Nelson, Jr., and J.M. Warlaumont, US Patent No. 4,405,238.


“Diamond: An efficient source of soft x-rays for high-resolution x-ray lithography”, David A. Nelson, Jr. and Arthur L. Ruoff, J. Appl. Phys. 49 (11), p. 5355, November 1978.

“Metallic Xenon at static pressures”, David A. Nelson, Jr. and Arthur L. Ruoff, Phys. Rev Letters, 42 (6), P. 383, February 1979.

“The compressive strength of perfect diamond”, David A. Nelson, Jr. and Arthur L. Ruoff, J. Appl. Phys. 50 (4), p. 2763, April 1979.

“A rigorous electromagnetic theory for the use of gratings for overlay and spatial period division in x-ray lithography”, Dieter P. Kern and David A. Nelson, Jr., Proceedings on the Symposium on Electron and Ion Beam Science and Technology, Ninth International Conference, R. Bakish (ed.), The Electrochemical Society, Inc., 1980, p. 491.

“A wide-range alignment system for X-ray lithography”, David A. Nelson, Jr., V. Dimilia, and J. M. Warlaumont, J. Vac. Sci. Technol., 19 (4), p. 1219, Nov/Dec 1981.

“Practical Implementation of Automatic site-by-site Alignment Technology”, David A. Nelson, Jr., Suzanne M. Voisin, and Norman Ahlquist, Proceedings of Interface '82' Kodak Microelectronics Seminar, San Diego, p. 1 18, Oct. 21-22, 1982.

“GaAs Integrated Circuit Manufacturing Technology Comes of Age”, Bryant M. Welch, David A. Nelson, and Yie-Der Shen. Proceedings of the IEEE 1986 Custom Integrated Circuits Conference, p. 67, May 12-15, 1986.

“The Effects of Proton Implant on GaAs Isolation Properties”, David A. Nelson, Jr., Yie-Der Shen, and Bryant M. Welch, J. Electrochem. Soc. 134 (10), p. 2549, October 1987.

“Launching GaAs Wafer FAB Technology Into LSI”, D.A. Nelson, C.J. Imboden, and B.M. Welch, Proceedings of the U.S. Conference on GaAs MANufacturing TECHnology, p. 77, Oct. 12-14, 1987. *GaAs ManTech Presentation Award

“An Ultra High Performance Manufacturable GaAs E/D Process”, Y.D. Shen, M.R. Wilson, M. McGuire, D.A. Nelson, and B.M. Welch, Proceedings of the IEEE Gallium Arsenide Integrated Circuit Symposium, p. 125, Oct. 13-16, 1987.

“Metallization Technology for GaAs Integrated Circuits”, B.M. Welch, D.A. Nelson, Y.D. Shen, and R. Venkataraman, Chapter 9, VLSI Electronics - Microstructure Science - Vol. 15 VLSI Metallization, p. 394, ed. by N.G. Einspruch, S.S. Cohen, and G.Sh. Gildenblat, Academic Press, Inc., 1987.

“Manufacturing AlGaAs/GaAs HBTs on 100mm Wafers”, R.T. Huang, D. Nelson, S. Mony, R. Tang, R. Pierson, J. Penney, and R. Sahai, Proceedings of the GaAs IC Symposium, p. 345, Oct. 10-13, 1993.

“A DOE Approach to Product Qualification For Linear Handset Power Amplifiers”, P. Zampardi, D. Nelson, P. Zhu, C. Luo, S. Rohlfing, and A. Jayapalan, Proceedings of the 2004 Compound Semiconductor MANTECH Conference, Miami, Florida, p. 91-94, May 3-5, 2004.

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